Semiconductor Manufacturing Imec Increases EUV Lithography Throughput With Oxygen Injection

Source: Press release | Translated by AI 2 min Reading Time

The Imec research center has developed a method to increase the throughput in EUV lithography. By increasing the oxygen concentration during the burn-in step after exposure, the required exposure dose of metal oxide resists can be reduced by 15 to 20 percent.

The Beforce platform from Imec.(Image: Imec)
The Beforce platform from Imec.
(Image: Imec)

Imec researchers demonstrate for the first time that controlling the gas composition during critical lithography steps can significantly improve the performance of photoresists in EUV patterning. Specifically, the scientists show that when the so-called post-exposure bake step—a heat treatment step after exposure—is carried out under increased oxygen concentration, the photosensitivity of metal oxide resists (MOR) increases significantly.

"We observe a 15 to 20 percent increase in photosensitivity when the oxygen concentration is increased from atmospheric 21 percent to 50 percent during the burn-in process," explained Ivan Pollentier, Senior Researcher at Imec, in the context of the SPIE Advanced Lithography + Patterning Conference 2026 in February. "This is the first demonstration that careful control of gas composition can significantly reduce the required EUV exposure dose." A lower dose means shorter exposure times per wafer and therefore higher throughput in chip production.

Graph showing the influence of oxygen injection on the EUV dose required for printing for both the model and the commercial MOR. At oxygen concentrations above 21% (oxygen in the ambient air), a significant reduction in the EUV dose is observed.(Image: Imec)
Graph showing the influence of oxygen injection on the EUV dose required for printing for both the model and the commercial MOR. At oxygen concentrations above 21% (oxygen in the ambient air), a significant reduction in the EUV dose is observed.
(Image: Imec)

Metal oxide resists are considered a promising alternative to chemically amplified resists (CAR), as they offer higher resolution, lower edge roughness and better structure transfer in thin resist layers. They are particularly suitable for high-NA-EUV lithography, which is required for the production of chips with structure widths of less than three nanometers.

The results were achieved using the Beforce tool, a research platform that Imec developed specifically to perform lithography steps under precisely controlled environmental conditions. "In commercial EUV clusters, wafers are exposed in a vacuum and then transported to the burn-in unit under atmospheric conditions," says Kevin Dorney, head of the R&D team at Imec. "Our Beforce tool isolates these steps from the cleanroom atmosphere and enables precisely controlled gas injections."

In order to make the results usable in production, Imec is working on a deeper understanding of the chemical mechanism during the curing process. Experiments with integrated Fourier transform infrared spectroscopy are currently underway to record chemical changes under different environmental conditions. Equipment manufacturers can use the findings to adapt their lithography systems for higher throughput and better stability. The Beforce tool is available to Imec partners for resist evaluation. Two talks on the research results were given at the SPIE event, which you can watch on demand. (sb)

Link: Paper 13983-36: Unraveling a new dose reduction strategy for metal oxide resist by the atmospheric environment of the post exposure bake

Link: Paper 13983-50: Chemical origins of environmental modifications to the lithographic chemistry of metal oxide resists

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