GaN in Power Electronics Imec Launches 12 Inches GaN Program to Develop Advanced Power Devices

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The research institute imec has launched a new program for GaN power electronics to develop 12 inches GaN epi-growth and process flows for GaN high-electron-mobility transistors (HEMT) for low and high voltage. The first partners of the innovation program are AIXTRON, Globalfoundries, KLA Corporation, Synopsys, and Veeco.

The recent market launch of GaN-based fast chargers highlights the potential of GaN technology for applications in power electronics. Thanks to continuous advancements in GaN epitaxy, GaN component and IC manufacturing, reliability and robustness, as well as system-level optimization, GaN technology is ready to enable a new generation of power electronics products. These will enter the market with smaller dimensions, lower weight, and higher energy conversion efficiency compared to Si-based solutions. Examples include onboard chargers and DC/DC converters for automotive applications, inverters for solar systems, and power distribution systems for telecommunications and AI data centers—areas where GaN-based components contribute to the overall decarbonization, electrification, and digitalization of society.

A trend in GaN technology development is the transition to larger wafer diameters, with capacities currently mostly available at 8 inches. With the launch of its 8 inches GaN program, Imec takes the next step, building on its 8 inches expertise.

“The advantages of transitioning to 12 inches wafers go beyond increasing production capacity and reducing manufacturing costs," says Stefaan Decoutere, Fellow and Program Director of the GaN Power Electronics Program at Imec. “Our CMOS-compatible GaN technology now has access to state-of-the-art 12 inches facilities, enabling us to develop more advanced GaN-based power components.” Examples include aggressively scaled low-voltage p-GaN gate HEMTs for use in point-of-load converters, which support energy-efficient power distribution for CPUs and GPUs.

As part of the 12 inches GaN program, a foundational lateral p-GaN HEMT technology platform for low-voltage applications (100 V and above) is initially being established using 12 inches Si(111) as the substrate. To this end, process modules are currently being developed, focusing on p-GaN etching and the formation of ohmic contacts. High-voltage applications are planned to follow later. For 650 V and beyond, 12 inches semiconductor specifications and CMOS-compatible QST substrates (a material with a polycrystalline AlN core) will be utilized. During development, key priorities include controlling the warping of the 12 inches wafers and ensuring their mechanical strength.

The launch of the 12 inches GaN program comes after successful tests in handling 12 inches wafers and the development of mask sets. Imec anticipates that the full 12 inches setup will be installed in its 12 inches cleanroom by the end of 2025. “The success of the 12 inches GaN development also depends on the ability to build a robust ecosystem and drive innovation together, from 12 inches GaN manufacturing and process integration to packaging solutions,” adds Stefaan Decoutere. “We are therefore pleased to announce AIXTRON, Globalfoundries, KLA Corporation, Synopsys, and Veeco as the first partners in our open R&D program for 12 inches GaN and hope to welcome additional partners soon. The development of advanced GaN power electronics requires a close connection between design, epitaxy, process integration, and applications—a connection that has proven crucial for our pioneering work with 8 inches GaN.” (sg)

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