Power Semiconductor Manufacturing Infineon Secures 200-mm SiC Wafers from Wolfspeed

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Infineon and Wolfspeed are expanding their long-standing partnership to include the supply of 200 silicon carbide wafers. The agreement is intended to support the ramp-up of SiC production, reduce production costs, and strengthen the supply chain.

Infineon Technologies and Wolfspeed have signed a multi-year supply agreement for 200-mm (8-inch) silicon carbide (SiC) wafers, as reported by both companies announced on October 15, 2026. The two companies have been working together for more than 20 years. The change: Until now, the supply relationship has included 150-mm (6-inch)  substrates; in the future, 200-mm wafers will be added. In this way, Wolfspeed is supporting Infineon’s gradual transition of SiC production to larger wafer diameters.

For Infineon, the agreement is part of a multi-sourcing strategy through which the semiconductor manufacturer is diversifying its supply of SiC substrates across multiple suppliers. This is intended to reduce dependence on individual sources of supply and increase flexibility in expanding manufacturing capacity.

Cost-Effectiveness in SiC Manufacturing

The transition from 150-mm to 200-mm wafers offers primarily economic advantages. From a purely geometric perspective, a 200-mm wafer provides approximately 78 percent more surface area than a 150-mm wafer. This allows more semiconductor devices to be manufactured on a single wafer while maintaining comparable chip sizes. However, actual cost advantages depend on sufficiently high yields and correspondingly efficient manufacturing. Infineon expects the larger substrates to result in lower unit costs and higher production efficiency. The plant in Kulim, Malaysia, plays a key role in this regard, as it is designed for the high-volume production of SiC power semiconductors on 200-mm wafers.

“The agreement expands our established supplier base for high-volume 200-mm manufacturing and builds on a 20-year supply relationship between our two companies,” explains Alexander Gorski, Chief Operations Officer at Infineon. The goal is to improve both supply reliability and production scalability.

High-Demand SiC Power Semiconductors

Silicon carbide is gaining particular importance in applications that require high voltages, low switching losses, and efficient heat dissipation. These include traction inverters in electric vehicles, charging infrastructure, solar inverters, and industrial drive systems. Infineon also sees the power supply for AI data centers as an additional growth market. There, SiC power semiconductors can help reduce losses and improve energy efficiency at certain stages of energy conversion.

According to a forecast by Yole Group cited by Wolfspeed, the global market for SiC power semiconductors is expected to grow from $3.4 billion in 2024 to $11.1 billion in 2031. With this expanded supply agreement, the two companies aim to lay the groundwork for meeting this demand through more cost-effective, large-scale production.