Power Semiconductors Nexperia Expands Its GaN Portfolio for Robot Drives

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Nexperia plans to nearly double its GaN portfolio by 2026. The semiconductor manufacturer also demonstrated how GaN transistors can be used to create more compact and efficient motor drives for humanoid robots.

Semiconductor manufacturer Nexperia is expanding its power semiconductor business. Its GaN portfolio is expected to nearly double by 2026. At the same time, the company plans to release approximately 60 SiC diodes and MOSFETs. At the Pretzl Connect industry conference, Olaf Vogt, Director and Head of Product, Application Marketing, and Engineering, and Filippo Scrimizzi, Regional System Application Director, outlined the technical priorities. In addition to AI data centers and electric mobility, the focus is shifting toward motor control for humanoid robots.

Nexperia plans to expand its business—which has so far been heavily focused on standard discrete semiconductors—to include power semiconductors, modules, and analog and power ICs. The problems with the Chinese sites should not slow the Group down, Vogt said in his presentation: “At the same time, we are continuing our investments in the power semiconductor sector.”

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Hundreds of GaN Switches per Robot

Nexperia sees particular potential for low-voltage GaN in humanoid robots. The presentation estimates 25 to 35 joint actuators for the torso and limbs. For actuators in the medium- and high-power ranges, Nexperia cites power ratings between 0.5 and 2 kW. In addition, there are 12 to 24 smaller actuators for hands and fingers, each with a power output of 20 to 250 W.

According to a market estimate presented by Nexperia, a humanoid robot could contain 200 to 300 GaN switches in the future. This estimate is based on the assumption that approximately 65 percent of motor drives will use GaN technology. Higher-power joints—such as the hips, knees, and shoulders—are considered the primary areas of application. Smaller drives are likely to continue using primarily silicon transistors for the time being.

Three Half-Bridges for the Engine Control System

Nexperia demonstrated how GaN can be used for this purpose using a three-phase motor drive with three independently controlled half-bridges. In this context, the company highlights the GaN transistors GANE0R8-100QTM, GAN3R2-100CBE, and GANE1R8-100QBA. The presentation also covers the parallel connection of low-voltage E-Mode GaN transistors.

The technology is designed to enable higher switching frequencies and shorter dead times. This allows for smaller passive components, power stages, and cooling systems. At the same time, Nexperia expects lower losses and more precise motor control. However, the presentation does not provide specific comparative measurements regarding the efficiency of the robot drive shown.

Scrimizzi emphasized that data sheet specifications alone say little about how a component will perform in the finished system. “It is crucial to test the device and the technology under real-world operating conditions,” he explained. Using a separate GaN converter test, Nexperia demonstrated that a device with nominally inferior specifications can still achieve better efficiency at higher power levels. For developers, therefore, it is not just the transistor technology that matters, but how it interacts with the circuit, the drive circuitry, and the thermal design. 

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