On-Wafer Measurements Characterizing InP-HEMTs up to 250 GHz in a Single Measurement Run

Source: Press Release | Translated by AI 2 min Reading Time

Keysight, the University of Glasgow, the National Physical Laboratory, and MPI Corporation have demonstrated a method for broadband on-wafer characterization of InP HEMTs. It is designed to enable measurements from near DC up to 250 GHz without having to reposition the probe between measurements.

Keysight is working with research institutes to simplify the testing of next-generation semiconductor devices.(Image: Keysight)
Keysight is working with research institutes to simplify the testing of next-generation semiconductor devices.
(Image: Keysight)

To develop semiconductor devices in the millimeter-wave and sub-THz ranges, engineers must characterize their behavior over a wide frequency range. Conventional measurement setups sometimes require multiple configurations and calibrations. This increases the effort involved and can make it difficult to ensure the comparability of the data.

For their approach, the four partners combined a PNA-X Vector Network Analyzer and a 250-GHz frequency extender from Keysight with a precision SMU. In addition, the project utilized InP HEMTs and on-wafer calibration standards from the University of Glasgow, probe technology and calibration software from MPI Corporation, and calibration methods from the National Physical Laboratory (NPL). InP-HEMTs are high-electron-mobility transistors (HEMTs) based on indium phosphide semiconductor technology. They are suitable for applications at very high frequencies.

For Direct Current Up to 250 GHz

According to the partners, the setup enables continuous characterization from near DC up to 250 GHz in a single run. The probe remains in the same position on the wafer throughout the process. The integrated source filtering and broadband calibration of the source power are also designed to improve signal purity at the probe. Broadband S-parameters were measured.

“The continuous characterization of components from near DC up to 250 GHz in a single sweep can significantly simplify the measurement process […],” says Thierry Locquette, Vice President of Sales for Europe, the Middle East, and Africa at Keysight. The collaboration demonstrates how test equipment, components, probes, and metrology can be combined to obtain consistent broadband data.

The NPL also emphasizes calibration as an essential part of the measurement process. “Accurate on-wafer measurements are essential for the development of reliable semiconductor devices,” says Xiaobang Shang, senior scientist and head of the On-Wafer Measurement Technology Division at NPL. MPI Corporation points out that test, calibration, and measurement platforms for measurements up to 250 GHz must work together as an integrated system.

The demonstration is intended to reduce the effort required for broadband measurements. The press release does not specify the measurement uncertainty achieved by the setup across the entire frequency range or how the transitions between the measurement ranges are implemented. 

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