STMicroelectronics is building the SiC campus in Italy

SiC manufacturing for power electronics STMicroelectronics is building the SiC campus in Italy

2024-06-05 From Susanne Braun | Translated by AI 2 min Reading Time

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STMicroelectronics plans to establish a 200mm silicon carbide production for power electronics components, testing and packaging capabilities, as well as SiC substrate production on the SiC campus in Catania, Sicily. After completion, the fully integrated manufacturing facility is expected to produce 15,000 SiC wafers per week.

This is how those responsible at ST imagine the SiC campus.(Image: STMicroelectronics) — This is how those responsible at ST imagine the SiC campus.
(Image: STMicroelectronics)

In addition to gallium nitride, silicon carbide is gaining increasing importance as a wide-bandgap semiconductor, even though silicon continues to offer important qualities. SiC offers features such as increased switching speed, which makes the use of the semiconductor particularly interesting in the automotive industry. And as everyday mobility becomes increasingly electrified, the industry's demand for SiC components also increases.

STMicroelectronics, a semiconductor specialist, does not want to miss this trend and plans to build a SiC campus in Catania, Sicily. ST "announces the construction of a new 200mm silicon carbide manufacturing facility for power devices and modules, as well as for testing and packaging purposes, in Catania, Italy. Together with the SiC substrate manufacturing, which is currently being prepared at the same location, these facilities form ST’s Silicon Carbide Campus and realize the company’s vision of a fully vertically integrated manufacturing facility for the mass production of SiC at one location," according to a company announcement.

Italy provides 2 billion euros (2.17 billion USD) in support

Once completed in 2033, the campus is intended to serve as the center of ST's SiC ecosystem, integrating all stages of production. This includes the development of SiC substrates, epitaxy growth processes, 200-mm front-end production as well as module-backend assembly. The campus will also be involved in process research and development, product design, creating R&D labs for dies, providing power systems and modules, and packaging capacities. This will enable mass production of 200mm SiC wafers in Europe for the first time, according to ST.

Production in the facility is scheduled to start in 2026 and reach full capacity by 2033 - the goal is to produce 15,000 SiC wafers per week. Those responsible estimate that a total of 5 billion euros ( approx. 5.43 billion USD) will be invested in the construction of the SiC Campus, with the Italian government contributing 2 billion euros (approx. 2.17 billion USD) through the EU Chips Act. (sb)

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