SiC vs. GaN: Insights for Hardware Developers

Wide-Bandgap Semiconductors SiC vs. GaN: Who Will Win the Race? Insights for Hardware Developers

2025-10-22 By Hendrik Härter | Translated by AI 2 min Reading Time

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Expert Ralf Higgelke, who has been monitoring the industry for over 20 years, examines the evolution of SiC and GaN. He provides exclusive insights into the potential of monolithic GaN as well as the opportunities of UWBG materials for the future.

SiC or GaN: Ralf Higgelke provides insights into the potential of modern wide-bandgap materials.(Image: AI-generated) — SiC or GaN: Ralf Higgelke provides insights into the potential of modern wide-bandgap materials.
(Image: AI-generated)

Power electronics is at a critical turning point. The introduction of wide-bandgap (WBG) semiconductors has redefined the limits of what is possible in terms of efficiency, switching speed, and power density. But what is behind this technological revolution?

Our speaker Ralf Higgelke takes participants on a journey from the first silicon carbide (SiC) components to state-of-the-art gallium nitride (GaN) solutions and the emerging ultra-wide-bandgap (UWBG) materials like β-Ga₂O₃ and diamond. His lecture provides a unique journalistic perspective on this very development.

For more than two decades, he has been meticulously tracking the advancements in this dynamic field. The lecture is more than just a technical overview – it is an in-depth analysis of the technological and industrial milestones that have shaped the industry.

SiC vs. GaN: The First and Second Wave of Innovation

The discussion begins with a well-founded comparison of the pioneers: SiC and GaN. Based on personal conversations with leading figures from academia and industry, Higgelke highlights how materials science, innovative device design, and addressing complex manufacturing challenges have triggered successive waves of progress. SiC excels particularly in high-voltage and high-power applications, such as e-mobility or renewable energies, thanks to its excellent thermal properties and ability to handle very high breakdown voltages.

GaN impresses in high-frequency and fast-switching systems, such as those found in power supplies or RF applications, due to lower switching losses and the ability to manufacture components on cost-effective silicon substrates. The presentation will provide a detailed comparison of the differences in crystal growth and device architectures, intertwining the human and technological stories behind these innovations.

The Dynamics of the Supply Chain and a Look Ahead

Progress in the WBG world is closely linked to global supply chains. Ralf Higgelke's lecture examines recent shifts and highlights an exciting development: the emergence of monolithic bidirectional GaN. This technology is considered a crucial catalyst for advanced power electronics, as it enables entirely new circuit topologies, particularly in AC applications.

Finally, attention turns to the future: ultra-wide bandgap (UWBG) materials such as β-Ga₂O₃ and diamond. These materials promise significant improvements in breakdown voltage and efficiency, making them ideal candidates for the next generation of high-voltage and high-efficiency systems. But what obstacles in material growth and device manufacturing must still be overcome before this UWBG vision becomes a reality? (heh)

Power schematic circuit for the bi-directional three-level, two-phase converter. (Image: Efficient Power Conversion (EPC))

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Date: 08.12.2025

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