New SiC MOSFET generation More power, more robust, more efficient: Wolfspeed introduces the 4th generation SiC MOSFETs

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Wolfspeed

Wuxi InfiMotion Technology Co., Ltd.

The new generation of SiC MOSFETs from Wolfspeed promises more power and efficiency at higher temperatures while maintaining the same size, as well as increased robustness and durability. The new products are primarily targeted at high-power systems for the automotive industry, industry, and renewable energy.

Wolfspeed presents the fourth generation of their SiC MOSFETs to the public, which are said to show better performance in all key areas at the same size. We will explore the optimizations compared to previous designs in more detail below, but if you want to learn all the important details, you should take a look at the extensive whitepaper on the Gen-4 SiC MOSFETs.

Importantly, as Wolfspeed explained to us beforehand, the goal with the new generation of MOSFETs was not just to improve efficiency but to minimize all factors that contribute to a reduction in the application's lifespan as much as possible. In summary, the new MOSFET platform brings significant improvements in performance, reliability, and efficiency. By reducing switching losses, improving handling of high temperatures and voltage fluctuations, and increasing resistance to cosmic radiation, the platform is of interest for demanding and critical applications such as power electronics, aerospace, automotive engineering, and industrial applications.

Wolfspeed's Gen 4 products are available in 750-V, 1,200-V, and 2,300-V nodes, with options for power modules, discrete components, and bare-die products. New product launches, including additional footprints and RDS_ON ranges, will be available throughout 2025 and early 2026.

Gen 4 SiC MOSFETs from Wolfspeed—efficiency improvements

Compared to the previous generation of SiC MOSFETs, the resistance (R_SP) at operating temperature has been reduced by up to 21 percent. This means that the new generation offers better performance at higher temperatures by reducing energy consumption and heat generation.

Simultaneously, the switching losses (E_ON + E_OFF) have been reduced by up to 15 percent. This results in less heat, which needs to be dissipated when switching more efficiently with lower losses, especially in applications with high switching frequencies such as in power supplies and power converters.

Especially the performance of hard-switching applications with fast and frequent switching operations is improved by reducing the E_ON losses (which occur when a MOSFET is turned on). Additionally, the MOSFET can be used at a temperature of 175 °C (347°F) under real operating conditions. The die can be continuously operated at up to 185 °C and for a limited time at 200 °C (392 °F).

Durable SiC MOSFETs in harsh conditions

A significant advancement is that Wolfspeed's developers have reduced the amount of undesired voltage overshoot by up to 80 percent, making the application more durable because there is less voltage stress imposed on it. By reducing the V_DS overshoot, the MOSFET becomes more robust and efficient, especially during fast switching operations. Additionally, the application is protected against short circuits for 2.3 microseconds without being permanently affected by overheating or damage.

Through the 100-fold improvement in the FIT (failure in time) rate, the component becomes significantly more resistant to cosmic radiation, making it better suited for more demanding and critical applications than previous versions from Wolfspeed.

Solution for fast switching operations

The fourth generation of SiC MOSFETs is as large—or in this case, as small—as the previous version, which has been around for a few years. Nevertheless, as promised by those responsible, up to 30 percent more power can be extracted from the application. More power output with the same footprint can already be a compelling argument.

The body diode of the MOSFET has been improved 3.5 times, resulting in a smoother switching characteristic without increasing the reverse recovery charge (Q_RR). This improvement ensures less power loss and higher efficiency during fast switching operations without negative impacts on reverse recovery charge.

Moreover, the MOSFET is designed to switch safely and efficiently even with rapid voltage fluctuations (high dV/dt) thanks to a capacitance ratio of up to 600:1. This ensures that the MOSFET has no problems at high switching frequencies and rapid voltage jumps, guaranteeing clean and lossless switching operations. (sb)