Future EVs Mazda and Rohm work on GaN power semiconductors

From Sven Prawitz | Translated by AI 1 min Reading Time

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Less energy loss, smaller components, higher efficiency: Mazda and Rohm are developing components for future electric cars with their cooperation on GaN power semiconductors.

Mazda is testing the use of GaN power semiconductors.(Image: Mazda)
Mazda is testing the use of GaN power semiconductors.
(Image: Mazda)

Mazda and Rohm are jointly developing gallium nitride (GaN) power semiconductors for electric vehicles. The two companies want to create a demonstration model this year; the components are to be implemented by 2027. The aim is to create lightweight, compact and efficient components for electric cars. GaN semiconductors reduce energy losses during conversion and enable significantly smaller components than conventional silicon semiconductors thanks to their high-frequency operation.

The current collaboration builds on an existing partnership. The companies have been jointly developing inverters with silicon carbide power semiconductors since 2022. By working with Mazda, the supplier aims to better understand the requirements for GaN from the perspective of the end products.

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