GaN driver GaN in Space

Related Vendors

Texas Instruments

FAULHABER Drive Systems

Wuxi InfiMotion Technology Co., Ltd.

Modern satellite systems are becoming increasingly complex. Therefore, the demand for efficient and space-saving power supply solutions for space applications is growing. New GaN FET gate drivers enable compact, high-performance energy management. This optimizes size, weight, and energy efficiency.

Satellites have to handle a variety of tasks, ranging from high-resolution earth observations to global data transmissions. This naturally increases the power demand, as sensors and data processing become increasingly sophisticated. Therefore, compact and highly efficient power supplies are essential. In addition to GaN-FETs, GaN-FET gate drivers are also required to provide precise control with short switching times. This allows for improved utilization of energy generated by solar cells, which directly affects the operational efficiency of the satellites.

When using semiconductors in space, many challenges need to be considered. One of the most significant is the exposure to radiation. Electronic components can be damaged or disrupted in their function by high-energy particles from cosmic radiation or from the sun. For this reason, semiconductors must be either radiation-tolerant or radiation-hardened (Rad-Hard / Radiation-hardened).

Two major radiation effects are the Total Ionizing Dose (TID) and the Single Event Effects (SEE). A TID involves a long-term radiation exposure that changes the electrical properties of a semiconductor. SEE, on the other hand, can trigger switching processes in the semiconductor or cause permanent damage due to single particles.

In addition to radiation, semiconductors must also withstand extreme temperature fluctuations. Although it's often comfortably cool in space, which rarely leads to overheating (-328°F), temperatures over 302°F can also occur. To endure such conditions, special cooling mechanisms or heat-resistant housing materials are necessary. Furthermore, the components must withstand mechanical stresses. In addition to constant thermal expansion, intense vibrations and acceleration forces occur during rocket launches. To tackle these challenges, semiconductors for space use are often employed in hermetically sealed housings. These protect them from mechanical stresses and environmental influences. Therefore, material choice is crucial. For radiation, housing materials with high density and high atomic number are necessary.

Long-term reliability is also a crucial factor. Since satellites and space probes are often operated for years or decades without maintenance possibilities, semiconductors must exhibit a very low error rate. Components qualified for space use meet strict standards such as QML-V (Qualified Manufacturers List) or Space Enhanced Plastic (SEP), ensuring a long lifespan. Power supply in space is mostly achieved with the help of solar energy. To optimally use the limited energy of these cells, semiconductors with high efficiency are necessary. Especially modern technologies like gallium nitride (GaN) or silicon carbide (SiC) are the first choice here.

SWaP optimization for satellites

The reduction of Size, Weight, and Power (SWaP) is a crucial factor for modern space missions. GaN technology contributes to increased efficiency and mass reduction and offers the following benefits:

• Higher performance and improved energy conversion

• Extended mission lifespan through reduced thermal stress

• More compact design for space-saving layouts

• Reduced cooling effort due to lower power loss

• Versatile applications

Wide input voltage support for various satellite systems

• 200V variant for propulsion systems and primary power conversion from solar panels

• 60V and 22V versions for distribution and conversion tasks within the satellite

The radiation-hardened and radiation-tolerant variants make the components suitable for long-term use in low, medium, and geostationary orbits. (mr)