Infineon's GaN Roadmap Gallium Nitride as a Pillar of Energy and AI Strategy

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With new topologies, 300-mm manufacturing, and growing demand from AI data centers and electromobility, GaN is becoming the key technology of the next energy generation. However, behind the dazzling wafers, a tough race for cost leadership, production capacities, and system expertise is underway.

In recent years, the semiconductor material gallium nitride (GaN) has evolved from a niche solution for chargers to a key technology. This development is particularly evident in the strategic initiatives of major semiconductor players such as Infineon, but also in industry-wide manufacturing decisions, such as the recent plans for 200mm GaN manufacturing with Powerchip for Navitas Semiconductor. Together, these developments paint a picture of how the GaN market is changing structurally and technologically and what role Infineon is playing in this.

GaN Becomes a "Market Reality"

GaN power semiconductors are no longer seen as a futuristic option for high-end applications, but as the upcoming standard in several performance classes. Analysts expect the global GaN power semiconductor market to reach almost USD 3 billion by 2030 (a fourfold increase compared to 2025). The compound annual growth rate (CAGR) is estimated to be around 44% for the period from 2025 to 2030, with revenues expected to reach around USD 920 million by 2026 (Source: Yole-Group). This growth is not one-sided, but affects a range of application areas, from classic chargers to more sophisticated systems such as AI data centers and automotive charging infrastructures.

Infineon is positioning itself in this dynamic environment not only as a component supplier, but also as a system and technology partner. Thanks to its broad GaN portfolio strategy and the further development of technological core components, the company plays a central role in the adaptation of this technology.

Between Data Center and Robot

GaN spans a technological arc from data centers to robots. In AI data centers, power density and power requirements are increasing rapidly. GaN reduces switching losses, enables higher frequencies and improves thermal efficiency - a direct lever for operating costs and scalability.

At the same time, humanoid and collaborative robots benefit from the same physical advantages. Compact GaN-based motor controllers enable more precise movements in narrow joint structures, such as in elbow or hand modules. The combination of smaller size, higher efficiency and integrated sensor technology creates new degrees of freedom in design and performance.

GaN thus connects the digital infrastructure in which AI is trained with the physical systems that execute this AI - from the power supply module in the data center to the inverter in the robot joint.

GaN Bidirectional Switch and 300-mm Wafer

A look at the GaN manufacturing landscape shows that the industry is undergoing a structural reorganization. In July 2025, Navitas Semiconductor announced a strategic partnership with Powerchip Semiconductor Manufacturing Corporation (PSMC) to establish the production of GaN power semiconductors on 200 mm wafers. Production is to be based on an improved 180 nm CMOS process and address voltage classes from 100 V to 650 V.

This is also remarkable in light of the fact that TSMC plans to discontinue its GaN production by 2027 and focus more on advanced packaging technologies. The supply chains are shifting. Foundry models are facing IDM strategies.

While foundry-based providers operate flexibly, Infineon, as an integrated manufacturer (IDM), relies on vertical control - from development to 300 mm production. In a market with forecast growth of +400% by 2030, this question is becoming central: Who controls not only design, but also volume, yield and supply chain stability?

Market Dynamics and Manufacturing Landscape

A look at the GaN manufacturing landscape shows that the industry is not only changing technologically, but also structurally. In July 2025, Navitas Semiconductor announced a strategic partnership with the Taiwanese Powerchip Semiconductor Manufacturing Corporation (PSMC) to establish the production of GaN power semiconductors on 200 mm wafers. This production is to be based on an improved 180 nm CMOS process and cover a wide range of voltage classes in the portfolio from 100 V to 650 V.

Power Electronics

TSMC Will Separate from the Production of GaN Wafers by July 2027

This decision is notable because industry giant TSMC plans to discontinue its GaN manufacturing by July 2027 to focus more on other areas such as advanced packaging technologies. The resulting shift in the supply chain demonstrates how economic constraints and competitive pressures are impacting industry-specific manufacturing technologies. Companies like Navitas are making the transition to new forms of manufacturing through strategic partners, while traditional foundries are changing their focus.

Applications and Perspectives

GaN is increasingly being used in AI data centers, 48 V automotive architectures, solar systems, energy storage systems and industrial power supplies. There are also new fields such as digital medical technology, wearables and, in the future, even quantum computing, where low-noise, highly efficient power supplies are essential.

At the same time, market penetration is not yet complete. Many high-performance applications are only in the design-in phase. The next five years will decide whether GaN will gain significant market share over silicon and silicon carbide in the long term. In addition to performance parameters, cost per watt, reliability, packaging innovation and system integration are the key factors.

Concluding Remarks

Infineon's GaN roadmap shows how a traditional IDM player understands GaN as a platform technology. Bidirectional switches, intelligent controller integration, new packaging approaches and scaling to 300 mm are not isolated measures, but part of a structural market strategy. At the same time, foundry partnerships such as the one between Navitas and Powerchip show that the industrial base is reshaping itself. (mr)