Automotive Superjunction MOSFETs with enhanced power performance

More efficient DC/DC converters Automotive Superjunction MOSFETs with enhanced power performance

2024-03-13 Source: Press release | Translated by AI 2 min Reading Time

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The Superjunction MOSFETs of the STPOWER MDmesh DM9 AG series, suitable for automotive applications and designed for 600 V or 650 V, offer an outstanding level of efficiency and robustness for OBCs (On-Board Chargers) and DC/DC converters based on hard and soft switching topologies.

The MDmesh DM9 series Superjunction MOSFETs are silicon-based and are rated for up to 650 V.(Image: STMicroelectronics) — The MDmesh DM9 series Superjunction MOSFETs are silicon-based and are rated for up to 650 V.
(Image: STMicroelectronics)

Characterized by an excellent ratio between R_DS(on) and chip area and minimal gate charge, the silicon-based components combine low energy losses with outstanding switching performance, setting a new benchmark for the "Figure of Merit". Compared to the previous generation, the latest MDmesh DM9 technology shows reduced variation in the gate-source threshold voltage (V_gs(th)), resulting in steeper switching edges and lower turn-on and turn-off losses.

The improved reverse recovery behavior of the body diode is the result of a new, optimized process that also contributes to the overall robustness of the MOSFETs. The low reverse recovery charge (Q_rr) and the short reverse recovery time (t_rr) make the MDmesh DM9 series ideally suited for phase-shifted zero-voltage switching topologies that demand the highest possible efficiency.

The family is available in through-hole and surface-mount packages, assisting designers in achieving small dimensions, high power density, and great system reliability. The TO-247 LL (Long Lead) form factor is a popular through-hole option that simplifies design-in and is suitable for proven assembly processes. Among the surface-mountable housings, the H2PAK-2 (2 pins) and H2PAK-7 (7 pins) forms are optimized for bottom-side cooling, whether with thermally conductive substrates or by using circuit boards with thermal vias or other improvements. Also available are the top-side cooled surface-mountable housing variants HU3PAK and ACEPACK SMIT.

As the first product of the new STPOWER MDmesh DM9 AG series, the STH60N099DM9-2AG, a 27 A rated, AEC-Q101 qualified N-channel device with a 600 V rating in the H2PAK-2 package and a typical R_DS(on) value of 76 mΩ. ST will expand the family into a complete offering that covers a wide current range and features R_DS(on) values from 23 mΩ to 150 mΩ.

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