AlYN promises more energy-efficient electronics

Semiconductor research New Semiconductor Material: AlYN promises more energy-efficient electronics

2024-08-16 From Kristin Rinortner | Translated by AI 4 min Reading Time

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Aluminium-Yttrium Nitride is the new semiconductor that promises enormous potential for energy-efficient high-frequency and high-performance electronics for information and communication technologies. Scientists at the Fraunhofer Institute for Applied Solid State Physics have now achieved a breakthrough in manufacturing that is also suitable for mass production.

New Semiconductor Material: Researchers at the Fraunhofer IAF have succeeded in epitaxially growing AlYN/GaN heterostructures in an MOCVD reactor on 4-inch SiC substrates.(Image: © Fraunhofer IAF) — New Semiconductor Material: Researchers at the Fraunhofer IAF have succeeded in epitaxially growing AlYN/GaN heterostructures in an MOCVD reactor on 4-inch SiC substrates.
(Image: © Fraunhofer IAF)

Due to its outstanding properties, Aluminium-Yttrium Nitride (AlYN) is of interest to various research groups worldwide. However, manufacturing has so far been a major challenge. Up to now, it has only been possible to deposit AlYN using the sputtering process, which belongs to the PVD technology (physical vapour deposition).

Researchers at the Fraunhofer Institute for Applied Solid State Physics (IAF) have managed to produce AlYN using the more cost-effective MOCVD process (Metal-Organic Chemical Vapor Deposition). According to the researchers, this allows for new and more diverse applications to be developed.

Gallery

Image 1: The different color nuances of the AlYN/GaN wafer result from different yttrium concentrations and growth conditions.(Image: © Fraunhofer IAF)

Image 2: With their work on the epitaxy and characterization of AlYN/GaN heterostructures, the research team at the Fraunhofer IAF, led by Dr. Stefano Leone, made a breakthrough in the field of semiconductor materials.(Image: © Fraunhofer IAF)

"Our research marks a milestone in the development of new semiconductor structures. AlYN is a material that allows for performance enhancement while at the same time minimizing energy consumption, thus paving the way for innovations in electronics that our digitally networked society and the continuously increasing demands on technologies urgently need," says Dr. Stefano Leone, scientist at the Fraunhofer IAF in the epitaxy department. Due to its promising material properties, he is convinced that AlYN could become a key material for future technological innovations.

Recent research had already proven properties of AlYN such as ferroelectricity. The researchers at the IAF focused on the adaptability of the new compound semiconductor to gallium nitride (GaN) in particular: The lattice structure of AlYN can be optimally adapted to that of GaN and the AlYN/GaN heterostructure promises significant advantages for the development of forward-looking electronics.

From the AlYN layer to the AlYN/GaN heterostructure

In 2023, the research group already achieved groundbreaking results when they were able to deposit a 600 nm thick AlYN layer for the first time. The wurtzite-structured layer contained an unprecedented yttrium concentration of over 30 percent.

The researchers have now achieved a further breakthrough: they have produced AlYN/GaN heterostructures with precisely adjustable yttrium concentration, which are supposed to be characterized by excellent electrical properties and a homogenous structure. The yttrium concentration in the heterostructures reaches up to 16 percent. Under the leadership of Dr. Lutz Kirste, the structural analysis group is conducting further detailed analyses to better understand AlYN's fine structure and chemical properties.

The scientists have already been able to measure extremely promising electrical properties of AlYN that are of interest for use in electronic components. "We have been able to observe impressive values for sheet resistance, electron density and electron mobility. These results have shown us the potential of AlYN for high-frequency and high-power electronics," reports Leone.

AlYN/GaN heterostructures for high-frequency applications

Thanks to its wurtzite structure, AlYN can be very well adapted to the wurtzite structure of gallium nitride with a suitable composition. An AlYN/GaN heterostructure promises the development of semiconductor components with improved performance and reliability. In addition, AlYN has the ability to induce a two-dimensional electron gas (2DEG) in heterostructures. The latest research results from the Fraunhofer IAF show optimal 2DEG properties in AlYN/GaN heterostructures with a yttrium concentration of about 8 percent.

AlYN/GaN: Potential for HEMTs

The results from the material characterization also show that AlYN can be used in high electron mobility transistors (HEMTs). The scientists observed a significant increase in electron mobility at low temperatures (more than 3000 cm2/Vs at 7 K). The team has already made significant progress in demonstrating the epitaxial heterostructure required for manufacturing, and continues to investigate the new semiconductor with regard to manufacturing HEMTs.

The researchers also dare to make a positive prognosis for industrial use: With AlYN/GaN heterostructures that have grown on 4-inch SiC substrates, they have been able to demonstrate scalability and structural uniformity of the heterostructures. The successful production of AlYN layers in a commercial MOCVD reactor allows for scaling to larger substrates in larger MOCVD reactors. This method is considered the most productive for manufacturing large-scale semiconductor structures and highlights the potential of AlYN for large-scale production of semiconductor components.

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AlYN/GaN for non-volatile memory

Due to its ferroelectric properties, AlYN is highly suitable for the development of non-volatile memory applications. Another important advantage is that the layer thickness is not limited. Therefore, the research team suggests further exploring the properties of AlYN layers for non-volatile memory, as AlYN-based memory could drive sustainable and energy-efficient data storage solutions. This is particularly relevant for data centers, which are used to manage the exponential increase in computing capacity for artificial intelligence and have a significantly higher energy consumption.

The challenge: The oxidation susceptibility of AlYN

A significant hurdle for industrial use of AlYN is its susceptibility to oxidation, which impairs the suitability of the compound semiconductor for certain electronic applications. "In the future, it will be important to explore strategies to mitigate or overcome oxidation. This could include the development of high-purity precursors, the application of protective coatings, or innovative manufacturing techniques. The susceptibility of AlYN to oxidation presents a major challenge for research in order to ensure that research efforts are focused on the areas with the greatest prospects for success," concludes Leone.(kr)

Link: S. Leone et al. “Metal-Organic Chemical Vapor Deposition of Aluminum Yttrium Nitride”, Phys. Status Solidi RRL 17 2300091 (2023)

Link: I. Streicher et al. “Two-dimensional electron gases in AlYN/GaN heterostructures grown by metal–organic chemical vapor deposition”, APL Materials 12 051109 (2024)