Rohm: Schottky barrier diodes with a reverse recovery time of 15 ns

Components Rohm: Schottky barrier diodes with a reverse recovery time of 15 ns

2024-02-16 Source: Press release | Translated by AI 2 min Reading Time

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The new Schottky barrier diodes from Rohm have a breakdown voltage of 100 V and a reverse recovery time of 15 ns. This makes them suitable for LED headlights in motor vehicles or DC/DC converters for electric and hybrid vehicles.

The Schottky barrier diode family YQ achieves a reverse recovery time of 15 ns at 100 V breakdown voltage thanks to the trench-MOS structure.(Image: Rohm Semiconductor) — The Schottky barrier diode family YQ achieves a reverse recovery time of 15 ns at 100 V breakdown voltage thanks to the trench-MOS structure.
(Image: Rohm Semiconductor)

Schottky Barrier Diodes (SBDs) are used in various applications. In particular, SBDs with a trench-MOS structure, which have a lower forward voltage (V_F) than planar types, enable higher efficiency in rectification applications. However, a disadvantage of trench-MOS structures is that they generally have worse reverse recovery time (t_rr) than planar topologies, leading to higher power loss during switching.

Schottky barrier diodes with trench-MOS structure

In response, Rohm has developed the new YQ series, which uses a proprietary trench-MOS structure. This reduces V_F and I_R and improves t_rr. As an extension of the four existing conventional SBD series that have been optimized for a variety of requirements, the YQ series uses a trench-MOS structure for the first time. The proprietary design achieves a t_rr value of 15 ns. According to the manufacturer, this reduces t_rr losses by about 37 percent and the total switching losses by about 26 percent compared to conventional trench-MOS products. The new structure improves both V_F and I_R losses compared to conventional planar SBDs. This reduces power loss in applications involving forward voltage, for example, in rectification. At the same time, it reduces the risk of thermal runaway, which is a major problem with SBDs. The YQ series is therefore ideally suited for applications requiring fast switching, such as drive circuits for LED headlights in vehicles and DC/DC converters in xEVs.

New structural design

The trench-MOS structure is created by forming a trench with polysilicon in the epitaxial wafer layer to reduce the concentration of the electric field. This reduces the resistance of the epitaxial wafer layer, thereby achieving a lower V_F when voltage is applied in the forward direction. At the same time, the concentration of the electric field in the reverse direction is minimized, leading to a significant reduction in I_R. As a result, the YQ series improves V_F and I_R by about 7 percent and 82 percent, respectively, compared to conventional products.

Unlike typical trench-MOS structures, where the t_rr is worse than planar types due to the larger parasitic capacitance, the YQ series achieves the mentioned reverse recovery time through a new structural design. (se)

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